CALL FOR ABSTRACTS
**Short Abstract Deadline: February 28, 2014**
The IIT2014 Conference will be an open forum to discuss major challenges in current and emerging technologies related to the tools and process for ion implantation, thermal processing and semiconductor metrology. The Conference will offer an excellent opportunity for researchers and engineers in industry and universities to present their new research results and to prioritize mutual needs for future collaborative research. The conference will cover a wide range of topics on ion implantation technology and thermal processing for Semiconductor Devices and Materials including Junction, Contact, Material Modification, Process Modeling and Novel Metrology Methods. The technical program will consist of invited and oral presentations and poster sessions. For abstract guidelines and submission, please visit the www.iit2014.net
INVITED SPEAKERS
- S.C. Song (Qualcomm), “Transistor Scaling and New Materials : Implications on device and circuit designs“
- K. Suguro (Toshiba), “The Prospects and Challenges for Junction Process Technology for Advanced Devices”
- T. Kuroi (Renesas), “Power and Analog Devices trends, challenges : implant and thermal processing applications”
- L. Pipes (Intel), “FinFET Doping“
- S. Qin (Micron), “Plasma Doping for Advanced Memory Device Manufacturing”
- F. Benistant (GlobalFoundries) -“TCAD Modeling for next generation CMOS devices“
- W. Vandervost (IMEC), “Electrical and chemical metrology measurements for three dimensional devices”
- K. Jones (University of Florida), “Overview of junction and contact formation in III –V materials”
- H. Levinson (GlobalFoundries), “Lithography engineering by implantation and thermal processes”
- A Mayur (Applied Materials), “Thermal processing for Advanced Devices Fabrication”
- Y. Wang (UltraTech), “Millisecond annealing for Advanced Devices Fabrication”
- A. Claverie (CNRS), “Strain and Defect imaging of Ion Implanted Materials”
- M. Simmons (UNSW), “Single and Few atom Doping”
- N. Zographos (Synopsys), “Continuum Modeling of Implantation and Thermal Processes for Advanced Devices Formation”
Conference Topics (INCLUDE, BUT NOT LIMITED TOO)
- Ion Implantation Technology and Thermal Processing for Semiconductor Devices and Materials:
- Planar and nonplanar CMOS (FinFETs, nanowires, etc.), Memory devices, CMOS image sensors, Photovoltaic, Power Devices, LEDs, MEMS, Optoelectronics, etc.
- Si, Group IV, IIIV, ternary, quaternary, and quinternary materials
- Emerging Research Devices and Materials, including graphene, disulphides, polymers, etc.
- Junction and Contact formation
- Dielectrics and Conductors in electronic devices
- Precision Materials Modification by ion implantation and/or thermal treatment (e.g. work function tuning, etch rate modification, strain control, lithography enhancement, etc.)
- Beamline ion implantation, plasma doping, cluster beams and new doping techniques
- Rapid Thermal Processing, Laser Annealing, Microwave Annealing, and new thermal energy sources
- Metrology methods – elemental, electrical, and morphological analysis of 3-D devices, junctions, strain, interfaces, contacts, etc.
- Advances in modern implantation and annealing toolsets
- Ion-based, deterministic and delta-doping techniques – methods & techniques to create nano-scaled ordered structures/dopant arrays
- Process/TCAD modeling of all the above
CONTACT
AVS
Della Miller
110 Yellowstone Dr., Suite 120
Chico, CA 95973
Phone: 530-896-0477
E-mail: della@avs.org
http://www.iit2014.net
