Silicon Valley Area Chapter

(SCV, SF, OEB)

Ultrafast Time Domain Cryogenic CMOS Device Characterization Platform for Quantum Computing Applications 🗓

(Pragya Shrestha) -- cryo-CMOS, electronic functionality, device technology, low-temp models, low-power, measurements ...

Co-sponsored by the SCV Electron Devices chapter
Speaker: Pragya Shrestha, NIST
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Meeting Date: Thursday, September 30, 2021
Time: Checkin via WebEx at 11:50 AM; Presentation at 12:00 noon (PDT)
Cost: none
Reservations: https://ieee.webex.com/ieee/onstage/g.php?MTID=e5107e15702bcc93ab1dbe8dafe15e8b8
Summary: Cryogenic electronics have a wide range of applications, ranging from quantum information science to extra-terrestrial electronics to gravitational wave research to high performance computing. However, the dominant application leading the way for cryogenic electronics research is quantum computing, where electronic functionality at 4K or below has become a requirement. The most promising candidate to fulfill this functionality without disturbing the cryogenic environment, and with a path to large-scale integration, is CMOS. Therefore, a lot of effort has been put into the hunt for the right CMOS device technology and obtaining their low-temperature models for designing reliable and accurate cryogenic circuits. Though it has been acknowledged that precise characterization is crucial for reliable low power and low temperature circuit design, obtaining reliable device characterization and reliability at low temperatures has not been sufficiently addressed. Absent especially is the time domain characterization of devices which are crucial for designing accurate analog circuitry. This webinar will review the challenges of using cryogenic CMOS in the field of quantum computing and further discuss the motivation for creating cryogenic ultra-fast time domain device characterization setup for accurate high-performance cryogenic CMOS circuit design.

Bio: Pragya R. Shrestha is a research associate in the Nanoscale Processes and Measurements Group in the Nanoscale Device Characterization Division at the National Institute of Standards and Technology (NIST). She received her Electrical Engineering PhD degree (2013) from Old Dominion University. Her current research work includes developing innovative electrical device characterization techniques for novel devices. The device characterization mainly focuses on low temperature and ultra-fast measurements to understand device physics and reliability. She is also involved in developing the highly sensitive ESR (Electron Spin Resonance) technique relevant to a broad spectrum of materials systems which is otherwise difficult to realize using the conventional ESR setup with a high-Q resonator.

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