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Design of Broadband, Linear, and High-Efficiency mm-Wave Power Amplifiers in Silicon for 5G Applications
May 15 @ 3:00 pm - 5:00 pm
With 5G communication just around the corner, there is a rapidly increasing need for high-performance mm-Wave power amplifiers. However, these next-generation mm-Wave PAs are often expected to deliver nearly “perfect” performance. They should offer large output power to ensure sufficient link budget, broad bandwidth to support multi-standard communication or frequency reconfigurability/agility, high peak and back-off efficiency for energy saving, and also inherent linearity for Gbit/s complex modulations with minimum or even no digital pre-distortions (DPD). It is noteworthy that in conventional design notions a given PA design should simply take trade-offs among these performance aspects, instead of trying to achieve all of them. Interestingly, this somehow unreasonable quest for “perfect” mm-Wave PAs has recently stimulated a new wave of mm-Wave PA innovations at both circuit levels and architecture levels, which have substantially advanced the state of the art.
In this talk, we will first present the design fundamentals of power amplifiers with an emphasis for wireless communication applications. The state of the art of mm-Wave PAs in different device technologies will be reviewed based on the “Georgia-Tech Power Amplifiers Performance Survey.” We will next present several recent mm-Wave PA designs that feature various design techniques and innovations at both circuit-level (nonlinearity compensation, continuous-mode operations, broadband harmonic tuning) and architecture-level (such as Doherty and outphasing PAs). We will also showcase several mm-Wave PA/antenna co-design examples that exploit new antenna structures as a new design paradigm to further enhance mm-Wave PA output power and efficiency.
3:00-3:10pm Sign-in and networking
3:10-5:00pm Seminar (with Q&A after seminar)
Bldg: Qualcomm Q Auditorium
6455 Lusk Blvd
San Diego, California